Single Crystal Germanium Wafer / Ingot Featured Image

Tasi Crystal Germanium Wafer / Ingot

Fa'amatalaga

Tasi Crystal Germanium Wafer/Ingotpo'o le germanium monocrystalline o foliga lanu efuefu siliva, fa'afefeteina 937°C, mafiafia 5.33 g/cm³.Ole germanium tioata e malepelepe ma e itiiti le palasiti ile vevela ole potu.Ole germanium mama maualuga e maua ile sone opeopea ma doped i le indium ma le gallium poʻo le antimony e maua ai le n-ituaiga poʻo le p-ituaiga conductivity, lea e maualuga le eletise eletise ma le maualuga o le pu, ma e mafai ona faʻavevela eletise mo le anti-fogging poʻo le anti-icing. talosaga.Ole Crystal Germanium e tasi e tupu aʻe e Vertical Gradient Freeze VGF tekinolosi e faʻamautinoa ai le mautu o vailaʻau, faʻamaʻi faʻamaʻi, feʻaveaʻi lelei, faʻamaufaʻailoga maualuga maualuga ma le maualuga o le lattice atoatoa.

Talosaga

Tasi Crystal Germanium maua ai folafolaga folafola ma lautele talosaga, lea e faaaoga ai vasega faaeletonika mo diodes ma transistors, Infrared po opitika vasega germanium avanoa po o le faamalama mo IR opitika faamalama po o tisiketi, vaega opitika faaaogaina i le po faaaliga ma thermographic imaging fofo mo le saogalemu, fua mamao vevela, tau afi ma meafaigaluega mataituina alamanuia, mama doped P ma N ituaiga Germanium wafer e mafai foi ona faaaoga mo Hall aafiaga aafiaga.Cell grade e mo substrates faʻaaogaina i III-V tolu-junction solar cell ma mo le malosi Concentrated PV system of solar cell etc.

Su'esu'e nei

Fa'amatalaga

Fa'ailoga

Fa'amatalaga Fa'apitoa

Tasi Crystal Germanium

Tafafa Crystal Germanium Wafer po o Ingotfaʻatasi ai ma le n-ituaiga, p-ituaiga ma un-doped conductivity ma orientation <100> i Western Minmetals (SC) Faalapotopotoga e mafai ona tuʻuina atu i le tele o le 2, 3, 4 ma le 6 inisi lautele (50mm, 75mm, 100mm ma 150mm) ma i'uga i luga o le etched po o le polesi i totonu o le afifi o le pusa foam po o le kaseti mo wafer ma i taga palasitika fa'amaufa'ailoga mo ingot ma atigipusa pusa i fafo, polycrystalline germanium ingot o lo'o maua fo'i i luga ole talosaga, po'o le fa'avasegaina fa'apitoa e ausia ai le fofo atoatoa.

Faailoga	Ge
Numera Atomic	32
Atomic Weight	72.63
Vaega o Elemene	Metalloid
Vaega, Vaitaimi, Poloka	14, 4, P
Fauga tioata	Taimane
Lanu	paepae efuefu
Lisi Lisi	937°C, 1211.40K
Fa'apuna	2833°C, 3106K
Malosi ile 300K	5.323 g/cm³
Tete'e i totonu	46 Ω-cm
Numera CAS	7440-56-4
Numera EC	231-164-3

Leai.	Aitema	Fa'amatalaga Tulaga
1	Germanium Wafer	2"	3"	4"	6"
2	Ole mita mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
3	Metotia Tuputupu	VGF po'o CZ	VGF po'o CZ	VGF po'o CZ	VGF po'o CZ
4	Conductivity	P-ituaiga / doped (Ga poʻo In), N-ituaiga/ doped Sb, Un-doped
5	Fa'atonuga	(100)±0.5°	(100)±0.5°	(100)±0.5°	(100)±0.5°
6	Mafiafia μm	145, 175, (500-1000)
7	Resistivity Ω-cm	0.001-50	0.001-50	0.001-50	0.001-50
8	Fe'avea'i cm2/Vs	>200	>200	>200	>200
9	TTV μm maualuga	5, 8, 10	5, 8, 10	5, 8, 10	5, 8, 10
10	punou μm maualuga	15	15	15	15
11	Mata'utia μm	15	15	15	15
12	Ta'ese le cm-2 maualuga	300	300	300	300
13	EPD cm-2	<4000	<4000	<4000	<4000
14	Fa'atatau ole vaega a/wafer max	10 (i ≥0.5μm)	10 (i ≥0.5μm)	10 (i ≥0.5μm)	10 (i ≥0.5μm)
15	Fa'ai'uga	P/E, P/P poʻo pe a manaʻomia
16	afifiina	Pusa masitusi tasi po'o se kaseti i totonu, pusa pusa i fafo

Leai.	Aitema	Fa'amatalaga Tulaga
1	Germanium Ingot	2"	3"	4"	6"
2	Ituaiga	P-ituaiga / fa'apipi'i (Ga, In), N-ituaiga/ fa'apipi'i (As, Sb), Fa'a'ese'ese
3	Resistivity Ω-cm	0.1-50	0.1-50	0.1-50	0.1-50
4	Ta'ita'i Ola μs	80-600	80-600	80-600	80-600
5	Ingot Umi mm	140-300	140-300	140-300	140-300
6	afifiina	Fa'amaufa'ailoga i totonu o taga palasitika po'o pusa foam i totonu, pusa pusa i fafo
7	Fa'amatalaga	Polycrystalline germanium ingot e maua pe a talosagaina

Tasi Crystal Germaniummaua ai folafolaga folafola ma lautele talosaga, lea e faaaoga ai vasega faaeletonika mo diodes ma transistors, Infrared po opitika vasega germanium avanoa po o le faamalama mo IR opitika faamalama po o tisiketi, vaega opitika faaaogaina i le po faaaliga ma thermographic imaging fofo mo le saogalemu, fua mamao vevela, tau afi ma meafaigaluega mataituina alamanuia, mama doped P ma N ituaiga Germanium wafer e mafai foi ona faaaoga mo Hall aafiaga aafiaga.Cell grade e mo substrates faʻaaogaina i III-V tolu-junction solar cell ma mo le malosi Concentrated PV system of solar cell etc.