Indium Antimonide InSb

Fa'amatalaga

Indium Antimonide InSb, o se semiconductor o le vaega III-V faʻafefiloi tioata faʻatasi ma le zinc-blende lattice structure, o loʻo faʻapipiʻiina e le 6N 7N maualuga mama Indium ma elemene antimony, ma tupu aʻe tioata tasi e ala i le VGF poʻo le Liquid Encapsulated Czochralski LEC metotia mai le tele o sone faʻamamaina polycrystalline ingot, lea e mafai ona tipiina ma fau i le wafer ma poloka mulimuli ane.O le InSb o se semiconductor fa'aliliu sa'o ma se va vaapiapi vaapiapi o le 0.17eV i le vevela o le potu, maualuga le lagona i le 1-5μm wavelength ma ultra high hall mobility.Indium Antimonide InSb n-ituaiga, p-ituaiga ma semi-insulating conductivity i Western Minmetals (SC) Faalapotopotoga e mafai ona ofoina atu i le lapopoa o le 1″ 2″ 3″ ma le 4” (30mm, 50mm, 75mm, 100mm) le lautele, orientation < 111> po o le <100>, fa'atasi ai ma le fa'au'u masifinifi i luga o le fa'a'oti, fa'apa, togitogi ma fa'aiila.Indium Antimonide InSb faʻamoemoe o le Dia.50-80mm faʻatasi ai ma le un-doped n-type o loʻo avanoa foi.I le taimi nei, o le polycrystalline indium antimonide InSb ( multicrystal InSb) faʻatasi ai ma le lapoʻa le masani, poʻo le avanoa (15-40) x (40-80)mm, ma le paʻu lapotopoto o le D30-80mm e faʻapipiʻiina foi pe a talosagaina i le fofo atoatoa.

Fa'atatauga

Indium Antimonide InSb o se tasi mea e sili ona lelei mo le gaosiga o le tele o vaega faʻaonaponei ma masini, e pei o le faʻaogaina o ata faʻamalama, FLIR system, hall element ma magnetoresistance effect element, infrared homeming missile taʻiala faʻaogaina, faʻalogo maualuga Infrared photodetector sensor. , maualuga-saʻo maneta ma rotary resistivity sensor, focal planar arrays, ma fetuutuunai foi e avea o se puna o le radiation terahertz ma i infrared astronomical space telescope etc.

Su'esu'e nei

Fa'amatalaga

Fa'ailoga

Fa'amatalaga Fa'apitoa

Indium Antimonide

InSb

Indium Antimonide Substrate(InSb Substrate, InSb Wafer) n-ituaiga po'o le p-ituaiga i Western Minmetals (SC) Faalapotopotoga e mafai ona ofoina atu i le lapopoa o le 1" 2" 3" ma le 4" (30, 50, 75 ma le 100mm) le lautele, faʻasinomaga <111> poʻo <100>, ma fa'atasi ai ma fa'ama'i masi fa'alava o fa'ama'i, togitogi, fa'aiila.

Indium AntimonidePolycrystalline (InSb Polycrystalline, poʻo le multicrystal InSb) faʻatasi ai ma le lapoʻa le masani, poʻo avanoa (15-40)x(40-80)mm e faʻapipiʻiina foi pe a talosagaina i le fofo atoatoa.

I le taimi nei, Indium Antimonide Target (InSb Target) o le Dia.50-80mm ma le un-doped n-type o loʻo avanoa foi.

Leai.	Aitema	Fa'amatalaga Tulaga
1	Indium Antimonide Substrate	2"	3"	4"
2	Ole mita mm	50.5±0.5	76.2±0.5	100±0.5
3	Metotia Tuputupu	LEC	LEC	LEC
4	Conductivity	P-ituaiga/Zn,Ge doped, N-ituaiga/Te-doped, Un-doped
5	Fa'atonuga	(100)±0.5°, (111)±0.5°
6	Mafiafia μm	500±25	600±25	800±25
7	Fa'asinomaga Flat mm	16±2	22±1	32.5±1
8	Faailoaina Flat mm	8±1	11±1	18±1
9	Fe'avea'i cm2/Vs	1-7E5 N/un-doped， 3E5-2E4 N/Te-doped, 8-0.6E3 po'o ≤8E13 P/Ge-doped
10	Fa'amauina o le Aveave cm-3	6E13-3E14 N/un-doped, 3E14-2E18 N/Te-doped, 1E14-9E17 po'o <1E14 P/Ge-doped
11	TTV μm maualuga	15	15	15
12	punou μm maualuga	15	15	15
13	Mata'utia μm	20	20	20
14	Ta'ele'ele Masitele cm-2 maualuga	50	50	50
15	Fa'ai'uga	P/E, P/P	P/E, P/P	P/E, P/P
16	afifiina	Fa'amaufa'ailoga fa'amaufa'ailoga ta'itasi i totonu o le taga alumini.

Leai.	Aitema	Fa'amatalaga Tulaga
Leai.	Aitema	INdium Antimonide Polycrystalline	Indium Antimonide Target
1	Conductivity	Fa'asalaina	Fa'asalaina
2	Fa'amauina o le Aveave cm^-3	6E13-3E14	1.9-2.1E16
3	Fe'avea'i cm²/Vs	5-7E5	6.9-7.9E4
4	Tele	15-40x40-80 mm	D(50-80) mm
5	afifiina	I totonu o taga alumini tuʻufaʻatasia, pusa pusa i fafo

Fua Faatatau Linear	InSb
Molecular Weight	236.58
Fauga tioata	Fa'afefiloi zinc
Fa'aaliga	tioata u'amea efuefu pogisa
Lisi Lisi	527 °C
Fa'apuna	N/A
Malosi ile 300K	5.78 g/cm³
Gap Malosiaga	0.17 eV
Tete'e i totonu	4E(-3) Ω-cm
Numera CAS	1312-41-0
Numera EC	215-192-3

Indium Antimonide InSbwafer o se tasi e sili ona lelei mo le gaosiga o le tele o vaega faʻaonaponei faʻaonaponei ma masini, e pei o le faʻaogaina o ata faʻamalama, FLIR system, hall element ma magnetoresistance effect element, infrared homing missile taʻiala faiga, maualuga-tali mai Infrared photodetector sensor, maualuga. -sa'o maneta ma rotary resistivity sensor, focal planar arrays, ma fetuutuunai foi e avea o se puna faalaleo terahertz ma i infrared astronomical space telescope etc.