Indium Oxide

Fa'amatalaga

Indium oxide I totonu₂O₃poʻo le indium trioxide 99.99%, 99.995%, 99.999% ma le 99.9999%, o se micropowder poʻo le nanoparticle moli-samasama paʻu malosi, CAS 1312-43-3, density 7.18g/cm³ma liusuavai i le 2000°C, o se mea mautu-pei o le sima e le mafai ona solu i le vai, ae solu i le vevela inorganic acid.Indium Oxide I totonu₂O₃o se n-ituaiga semiconductor mea aoga ma le resistivity itiiti, gaoioiga catalytic maualuga ma se va lautele fusi mo talosaga optoelectronic. Indium Oxide I totonu₂O₃i Western Minmetals (SC) Faalapotopotoga e mafai ona tuʻuina atu i le mama o 99.99%, 99.995%, 99.999% ma le 99.9999% i le tele o le 2-10 micron poʻo le -100 mesh paʻu ma nano grade, 1kg teuina i le fagu polyethylene ma faʻamaufaʻailoga pusa palasitika, poʻo le 1kg, 2kg 5kg i totonu o le ato alumini tuʻufaʻatasia ma pusa pusa i fafo, poʻo faʻapitoa faʻapitoa i fofo lelei.

Talosaga

Indium Oxide I totonu₂O₃o loʻo i ai le faʻaaogaina lautele i photoelectric, gas sensor, ata manifinifi infra-mumu reflectors, catalyst talosaga, faʻapitoa tioata lanu faʻaopoopo, maa alkaline, ma le maualuga o loʻo iai nei kilia eletise ma fesoʻotaʻiga, ufiufi puipui o le faʻata uʻamea, ma mo ata tifaga semiconductor o electro-optical fa'aali ma isi₂O₃o le fa'avae autu mo le ITO fa'amoemoe mo fa'aaliga, fa'amalama lelei ma le photovoltaics.E le gata i lea, In₂O₃o se elemene tetee i ICs e fausia ai heterojunctions ma mea e pei o p-InP, n-GaAs, n-Si ma isi semiconductors.I le taimi nei, O le i ai o aʻafiaga i luga, laʻititi laʻititi ma macroscopic quantum tunneling aafiaga,Nano I₂O₃e fa'amuamua mo pa'u fa'apipi'i ma fa'aantistatic, fa'aogaina fa'auluuluga fa'amanino.

Su'esu'e nei

Fa'amatalaga

Fa'ailoga

Fa'amatalaga Fa'apitoa

In₂O₃

Fa'aaliga	Pa'u samasama
Molecular Weight	277.63
Malosi	7.18 g/cm³
Lisi Lisi	2000°C
CAS Nu.	1312-43-2

Leai.	Aitema		Fa'amatalaga Tulaga
1	Mama i totonu₂O₃≥		Le mama (ICP-MS Su'ega Lipoti PPM Max ta'itasi)
2	4N	99.99%	Cu/Al 20, Ti 3.0, Pb 4.0, Sn 7.0, Cd 8.0, Fe 15	Aofa'i ≤100
	4N5	99.995%	Cu/Al/Cd/Sn/Ti/Ni/As/Zn 1.0, Si 2.0, Fe/Ca 5.0	Aofa'i ≤50
	5N	99.999%	Cu/Pb/Cd/Fe/Ni 0.5, Ca/Sn/Ti 1.0	Aofa'iga ≤10
	6N	99.9999%	Avanoa i luga ole talosaga	Aofa'i ≤1.0
3	Tele		2-10μm paʻu mo 4N 5N5 5N mama, -100mesh paʻu mo 6N mama.
4	afifiina		1kg i totonu ole fagu polyethylene ma fa'amaufa'ailoga pepa palasitika fafo

Indium Oxide I totonu₂O₃ poʻo Indium Trioxide I totonu₂O₃i Western Minmetals (SC) Faalapotopotoga e mafai ona tuʻuina atu ma le mama o 99.99%, 99.995%, 99.999% ma 99.9999% 4N 4N5 5N 6N i le tele o le 2-10 micron poʻo le -100 mesh paʻu ma le nano grade, 1kg faʻapipiʻi i le polyethylene fagu ato palasitika fa'amaufa'ailogaina, ona pusa fa'amau i fafo, po'o fa'apitoa fa'apitoa i fofo lelei.

Indium Oxide I totonu₂O₃o loʻo i ai le faʻaaogaina lautele i photoelectric, gas sensor, ata manifinifi infra-mumu reflectors, catalyst talosaga, faʻapitoa tioata lanu faʻaopoopo, maa alkaline, ma le maualuga o loʻo iai nei kilia eletise ma fesoʻotaʻiga, ufiufi puipui o le faʻata uʻamea, ma mo ata tifaga semiconductor o electro-optical fa'aali ma isi₂O₃o le fa'avae autu mo le ITO fa'amoemoe mo fa'aaliga, fa'amalama lelei ma le photovoltaics.E le gata i lea, In₂O₃o se elemene tetee i ICs e fausia ai heterojunctions ma mea e pei o p-InP, n-GaAs, n-Si ma isi semiconductors.I le taimi nei, O le i ai o le aʻafiaga i luga, laʻititi laʻititi ma le macroscopic quantum tunneling effect, Nano In₂O₃e fa'amuamua mo pa'u fa'apipi'i ma fa'aantistatic, fa'aogaina fa'auluuluga fa'amanino.