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Silicon & Compound Semiconductors

Western Minmetals (SC) Corporation WMC o se sili tuʻuina atu o 2-12 inisi tasi tioata poʻo monocrystal silicon e ala i le sao o le doping ma toso tekinolosi Czochralski CZ ma Floating Sone FZ e toto tioata mai polycrystalline silicon, ma tele annealing, lapoʻa, faʻamamaina, fasi, faʻapipiʻiina ma faʻamamaina gaioiga ma isi mulimuli ane. Silicon tioata silicon e faʻapitoa lava mo le gaosiaina o tuʻufaʻatasia o taʻamilosaga, diodes, thyristors, transistors, discrete vaega, mana masini, mana MOSFET, IGBT ma o le substrate mo maualuga maualuga fasimea poʻo vaʻaia detector etc.

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Faʻafetai i le maneta-fanua-faʻatupuina faia i le tulaga masani CZ ingot tosoina, MCZ tasi tioata silicon o se maualalo maualalo okesene tulaga, dislocation ma toniga resistivity fesuiaʻiga, ma feololo maualalo maualalo filogia filogia. FZ silicon faʻalauiloa tūsaʻo sone opeopea faʻamamaina tekonolosi e mautinoa ai le toniga dopant tufatufaina, o le maualalo resistivity fesuiaʻiga, faʻatapulaʻa aofaʻi o mea le mama, tele aveina olaga atoa ma faaopoopo maualuga resistivity sini. E le gata i lea, o le FZ NTD (Neutron Transmutation Doping) silicon ma le Epitaxial Silicon Wafer EPI na faʻaaogaina CVD o loʻo faʻaaogaina lautele i masini eletise.

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Tuuina semiconductors tuufaatasi lalolagi-vasega, lea e aofia ai ae le itiiti ifo Gallium Arsenide GaAs, Indium Arsenide InAs, Gallium Antimonide GaSb, Indium Antimonide InSb, Indium Phosphide InP, Gallium Phosphide GaP, Silicon Carbide SiC, Gallium Nitride GaN ma isi mo LED, nano- tuʻufaʻatasia matagaluega, eletise faʻamalosia, optoelectronic sensors, infrared detection masini, X-ray detector, mana eletise masini & fou malosiaga faʻavae. E le gata i lea, o se folafolaga taua Sapphire Aluminium Oxide Al2O3 tioata o le a avea ma mea taua tele i le optoelectronic, maualuga fesootaiga taimi, aeronautics ma astronautics pisinisi.
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