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Gallium Nitride GaN

Fa'amatalaga

Gallium Nitride GaN, CAS 25617-97-4, mole mole 83.73, fausaga tioata wurtzite, o se binary tuufaatasia tuusaʻo fusi-gap semiconductor o le vaega III-V tuputupu aʻe e se auala faagasologa ammonothermal sili ona atiae.O loʻo faʻaalia i se tulaga lelei atoatoa tioata, maualuga le vevela o le eletise, maualuga le eletise eletise, maualuga eletise eletise ma le lautele lautele, Gallium Nitride GaN o loʻo i ai uiga manaʻomia i optoelectronics ma sensing applications.

Talosaga

Gallium Nitride GaN e talafeagai mo le gaosiga o le gaosiga o le televave o le saoasaoa ma le maualuga o le malosi o le moli-emitting diodes LED vaega, laser ma optoelectronics masini e pei o le lanu meamata ma le lanumoana, eletise eletise eletise (HEMTs) oloa ma i le malosi maualuga. ma alamanuia gaosiga o masini vevela maualuga.

Tilivaina

Gallium Nitride GaN i Western Minmetals (SC) Corporation e mafai ona tu'uina atu i le lapopo'a o le li'o fa'ato'aga 2 inisi "po'o le 4" (50mm, 100mm) ma sikuea fa'ailoga 10x10 po'o le 10x5 mm.Soʻo se lapoʻa faʻapitoa ma faʻamatalaga e mo le tali sili ona lelei i a tatou tagata faʻatau i le lalolagi atoa.


Fa'amatalaga

Fa'ailoga

Fa'amatalaga Fa'apitoa

Gallium Nitride GaN

GaN-W3

Gallium Nitride GaNi Western Minmetals (SC) Faalapotopotoga e mafai ona tuʻuina atu i le lapopoa o le wafer lapotopoto 2 inisi "poʻo le 4" (50mm, 100mm) ma sikuea wafer 10 × 10 poʻo le 10 × 5 mm.Soʻo se lapoʻa faʻapitoa ma faʻamatalaga e mo le tali sili ona lelei i a tatou tagata faʻatau i le lalolagi atoa.

Leai. Aitema Fa'amatalaga Tulaga
1 foliga Li'o Li'o Square
2 Tele 2" 4" --
3 Ole mita mm 50.8±0.5 100±0.5 --
4 Itu Umi mm -- -- 10x10 po'o le 10x5
5 Metotia Tuputupu HVPE HVPE HVPE
6 Fa'atonuga C-vaalele (0001) C-vaalele (0001) C-vaalele (0001)
7 Ituaiga Conductivity N-ituaiga/Si-doped, Un-doped, Semi-insulating
8 Resistivity Ω-cm <0.1, <0.05, >1E6
9 Mafiafia μm 350±25 350±25 350±25
10 TTV μm maualuga 15 15 15
11 punou μm maualuga 20 20 20
12 EPD cm-2 <5E8 <5E8 <5E8
13 Fa'ai'uga P/E, P/P P/E, P/P P/E, P/P
14 Fa'asaa o luga Luma: ≤0.2nm, Tua: 0.5-1.5μm poʻo ≤0.2nm
15 afifiina Fa'amaufa'ailoga fa'amaufa'ailoga ta'itasi i totonu o le taga alumini.
Fua Faatatau Linear GaN
Molecular Weight 83.73
Fauga tioata Zinc blende/Wurtzite
Fa'aaliga Malosi fe'avea'i
Lisi Lisi 2500 °C
Fa'apuna N/A
Malosi ile 300K 6.15 g/cm3
Gap Malosiaga (3.2-3.29) eV ile 300K
Tete'e i totonu >1E8 ​​Ω-cm
Numera CAS 25617-97-4
Numera EC 247-129-0

Gallium Nitride GaNe talafeagai mo le gaosiga o le tipi-matamata maualuga saoasaoa ma le maualuga gafatia susulu malamalama-emitting diodes vaega LEDs, leisa ma optoelectronics masini e pei o le lanu meamata ma lanu moana lasers, eletise eletise mobility transistors (HEMTs) oloa ma i le malosi-maualuga ma maualuga- masini vevela fale gaosi oloa.

GaN-W1

GaN-W2

InP-W4

s12

PC-20

Fa'atauga Fautuaga

  • Fa'ata'ita'iga e Maua I luga ole Talosaga
  • Saogalemu La'uina o Oloa Ile Courier/Ea/Sami
  • COA/COC Puleaina lelei
  • Saogalemu & Faigofie le afifiina
  • UN Standard Packing e Maua i luga ole Fa'atonuga
  • ISO9001: 2015 Faʻamaonia
  • CPT/CIP/FOB/CFR Tuutuuga E Incoterms 2010
  • Tulaga Fetuutu'una'i Totogi T/TD/PL/C Taliaina
  • Au'aunaga Atoatoa Pe a uma ona Fa'atau
  • Su'esu'ega Tulaga Lelei e Fale Fa'asao
  • Rohs/REACH Tulafono Fa'amaonia
  • Maliega Le Fa'ailoaina NDA
  • Faiga Fa'avae Minerale e le Fete'ena'i
  • Iloiloga masani o le Pulega o le Siosiomaga
  • Faataunuuina o Tiutetauave Faaleagafesootai

Gallium Nitride GaN


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