Indium Phosphide InP

Fa'amatalaga

Indium Phosphide InP,CAS Nu.22398-80-7, mea faʻafefete 1600 ° C, o se semiconductor faʻapipiʻi binary o le III-V aiga, o se fausaga tioata tioata "zinc blende" faʻasaga i foliga, e tutusa ma le tele o semiconductors III-V, o loʻo faʻapipiʻiina mai. 6N 7N maualuga mama indium ma phosphorus elemene, ma tupu i se tioata tasi e le LEC po o le VGF metotia.Indium Phosphide tioata ua faʻapipiʻiina e avea ma ituaiga n-ituaiga, p-ituaiga poʻo le semi-insulating conductivity mo le faʻapipiʻiina atili o le wafer e oʻo atu i le 6" (150 mm) diamita, lea e faʻaalia ai lona va saʻo, maualuga maualuga le gaoioi o eletise ma pu ma lelei le vevela. conductivity.Indium Phosphide InP Wafer prime poʻo le suʻega suʻega i Western Minmetals (SC) Corporation e mafai ona ofoina atu i le p-type, n-type ma semi-insulating conductivity i le tele o le 2 "3" 4" ma le 6" (e oʻo atu i le 150mm) le lautele, fa'asinomaga <111> po'o le <100> ma le mafiafia 350-625um fa'atasi ai ma le fa'ai'uga o luga o le togitogia ma fa'aiila po'o le Epi-saunia faiga.I le taimi nei, Indium Phosphide Single Crystal ingot 2-6″ o loʻo avanoa pe a talosagaina.O le Polycrystalline Indium Phosphide InP poʻo le Multi-crystal InP ingot i le tele o le D(60-75) x Length (180-400) mm o le 2.5-6.0kg faʻatasi ai ma le faʻaogaina o le vaʻavaʻa e itiiti ifo i le 6E15 poʻo le 6E15-3E16 o loʻo avanoa foi.Soʻo se faʻamatalaga faʻapitoa e maua i luga ole talosaga e ausia ai le fofo atoatoa.

Talosaga

Indium Phosphide InP wafer o loʻo faʻaaogaina lautele mo le gaosiga o vaega optoelectronic, masini eletise eletise maualuga ma maualuga, e fai ma mea faʻapipiʻi mo epitaxial indium-gallium-arsenide (InGaAs) faʻavae masini opto-eletisi.Indium Phosphide o loʻo iai foʻi i totonu o le gaosiga mo punaʻoa malamalama sili ona lelei i fesoʻotaʻiga fiber opitika, masini eletise eletise, masini microwave ma masini FETs, masini faʻapipiʻi televave ma ata-suʻesuʻe, ma satelite navigation ma isi.

Su'esu'e nei

Fa'amatalaga

Fa'ailoga

Fa'amatalaga Fa'apitoa

Indium Phosphide InP

Indium Phosphide tioata tasiWafer (InP crystal ingot poʻo Wafer) i Western Minmetals (SC) Corporation e mafai ona ofoina atu i le p-type, n-type ma semi-insulating conductivity i le tele o le 2 "3" 4 "ma le 6" (e oʻo atu i le 150mm) le lautele, fa'asinomaga <111> po'o le <100> ma le mafiafia 350-625um fa'atasi ai ma le fa'ai'uga o luga o le togitogia ma fa'aiila po'o le Epi-saunia faiga.

Indium Phosphide Polycrystallinepo'o le Multi-Crystal ingot (InP poly ingot) i le tele o le D(60-75) x L(180-400) mm o le 2.5-6.0kg fa'atasi ai ma le fa'aogaina o le va'a e itiiti ifo i le 6E15 po'o le 6E15-3E16 o lo'o maua.Soʻo se faʻamatalaga faʻapitoa e maua i luga ole talosaga e ausia ai le fofo atoatoa.

Leai.	Aitema	Fa'amatalaga Tulaga
1	Indium Phosphide tioata tasi	2"	3"	4"
2	Ole mita mm	50.8±0.5	76.2±0.5	100±0.5
3	Metotia Tuputupu	VGF	VGF	VGF
4	Conductivity	P/Zn-doped, N/(S-doped po'o le un-doped), Semi-insulating
5	Fa'atonuga	(100)±0.5°, (111)±0.5°
6	Mafiafia μm	350±25	600±25	600±25
7	Fa'asinomaga Flat mm	16±2	22±1	32.5±1
8	Faailoaina Flat mm	8±1	11±1	18±1
9	Fe'avea'i cm2/Vs	50-70, >2000, (1.5-4)E3
10	Fa'amauina o le Aveave cm-3	(0.6-6)E18, ≤3E16
11	TTV μm maualuga	10	10	10
12	punou μm maualuga	10	10	10
13	Mata'utia μm	15	15	15
14	Ta'ele'ele Masitele cm-2 maualuga	500	1000	2000
15	Fa'ai'uga	P/E, P/P	P/E, P/P	P/E, P/P
16	afifiina	Koneteina wafer ta'itasi ua fa'amaufa'ailogaina ile taga alumini fa'afefiloi.

Leai.	Aitema	Fa'amatalaga Tulaga
1	Indium Phosphide Ingot	Poly-Crystalline po'o le Multi-Crystal Ingot
2	Tele tioata	D(60-75) x L(180-400)mm
3	Mamafa ile Crystal Ingot	2.5-6.0Kg
4	Fe'avea'i	≥3500 cm²/VS
5	Fa'atauva'a	≤6E15, poʻo le 6E15-3E16 cm^-3
6	afifiina	O atigi tioata InP taʻitasi o loʻo i totonu o taga palasitika faʻamaufaʻailoga, 2-3 atigipusa i totonu o le pusa pusa e tasi.

Fua Faatatau Linear	InP
Molecular Weight	145.79
Fauga tioata	Fa'afefiloi zinc
Fa'aaliga	tioata
Lisi Lisi	1062°C
Fa'apuna	N/A
Malosi ile 300K	4.81 g/cm³
Gap Malosiaga	1.344 eV
Tete'e i totonu	8.6E7 Ω-cm
Numera CAS	22398-80-7
Numera EC	244-959-5

Indium Phosphide InP Wafero loʻo faʻaaogaina lautele mo le gaosiga o vaega optoelectronic, maualuga-mana ma maualuga-telefoni masini faaeletonika, e avea o se substrate mo epitaxial indium-gallium-arsenide (InGaAs) faavae opto-eletise masini.Indium Phosphide o loʻo iai foʻi i totonu o le gaosiga mo punaʻoa malamalama sili ona lelei i fesoʻotaʻiga fiber opitika, masini eletise eletise, masini microwave ma masini FETs, masini faʻapipiʻi televave ma ata-suʻesuʻe, ma satelite navigation ma isi.