Silicon & Compound Semiconductors
Western Minmetals (SC) Corporation WMC ose fa'atau oloa tele 2-12 inisi tioata tasi po'o monocrystal silicon e ala i le sa'o doping ma toso tekinolosi.Czochralski CZmaSone Opeopea FZia tupu tioata mai polycrystalline silicon, ma tele annealing, lapotopoto, faamamaina, slicing, etching ma polesi faiga ma isi mulimuli ane.tasi tioata tioatae fa'amuamua mo le gaosiga o feso'ota'iga tu'ufa'atasi, diodes, thyristors, transistors, vaega tu'ufa'atasi,masini eletise, mana MOSFET, IGBT ma e fai ma mea e fa'atatau mo le maualuga o fa'ai'uga vaega po'o fa'ailoga mata'itusi ma isi.
Fa'afetai i le Magnetic-field-induced na faia i le CZ ingot tosoina, MCZ tasi tioata tioata o se tulaga maualalo okesene, dislocation ma toniga resistivity fesuiaiga, ma fa'atusatusa maualalo le fa'aogaina o le mama.FZ silikonifa'aofiina le tekonolosi fa'amama sone fa'a'a'a'e fa'ato'aga e fa'amautinoa ai le tufatufaina atu o le dopant toniga, le suiga aupito maualalo o le resistivity, fa'atapula'aina le aofa'i o mea le mama, tele le va'a o le olaga atoa ma fa'atasi ai ma le maualuga maualuga.E lē gata i lea,FZ NTD (Neutron Transmutation Doping) silikoni maEpitaxial Silicon WaferEPI faʻaaogaina CVD o loʻo faʻaaogaina lautele i masini eletise.
Tuuina atu o le lalolagi-vasega faʻapipiʻi semiconductors, lea e aofia ai ae le itiitiGallium Arsenide GaAs, Indium Arsenide InAs, Gallium Antimonide GaSb, Indium Antimonide InSb,Indium Phosphide InP, Gallium Phosphide GaP, Silicon Carbide SiC, Gallium Nitride GaN ma isi mo le LED, nano-integrated circuit, eletise eletise, optoelectronic sensors, infrared detectors, X-ray detectors, eletise eletise ma punaoa fou.E le gata i lea, o se faʻalapotopotoga faʻamaoniaSafaira Aluminium Oxide Al2O3tioata o lo'o avea ma mea taua i le optoelectronic, feso'ota'iga maualuga, ele'ele ma pisinisi astronautics.
