Indium Arsenide InAs

Fa'amatalaga

Indium arsenide InAs tioata o se semiconductor faʻapipiʻi o le vaega III-V faʻapipiʻiina e le itiiti ifo i le 6N 7N mama Indium ma Arsenic elemene ma faʻatupuina tioata tasi e le VGF poʻo le Liquid Encapsulated Czochralski (LEC) faʻagasologa, foliga lanu efuefu, tioata kupita ma le fausaga faʻafefiloi zinc. , le liusuavai o le 942 °C.Indium arsenide band gap o se suiga tuusaʻo e tutusa ma le gallium arsenide, ma o le lautele faʻasaina o le 0.45eV (300K).InAs tioata e maualuga le tutusa o laina eletise, lattice faifaipea, maualuga eletise eletise ma maualalo le mamafa.O se tioata InAs fa'agogo na totōina e le VGF po'o le LEC e mafai ona tipi ma fa'apipi'iina i se ma'i fa'a'oti, togitogi, fa'aiila pe epi-sauni mo MBE po'o le MOCVD epitaxial tuputupu a'e.

Talosaga

Indium arsenide crystal wafer o se mea sili ona lelei mo le faia o masini Hall ma le masini mageta mo lona faʻaogaina maualuga o le hall ae vaapiapi malosi bandgap, o se mea lelei mo le fausiaina o infrared detectors ma le galu umi o le 1-3.8 μm faʻaaogaina i faʻaoga maualuga-malosi. i le vevela o le potu, faapea foi i le ogatotonu o le galu infrared super lattice lasers, ogatotonu-infrared LEDs masini fabrication mo lona 2-14 μm galu umi.E le gata i lea, o le InAs o se mea sili ona lelei e lagolago atili ai le InGaAs, InAsSb, InAsPSb & InNASSb poʻo le AlGaSb super lattice structure ma isi.

Su'esu'e nei

Fa'amatalaga

Fa'ailoga

Fa'amatalaga Fa'apitoa

Indium Arsenide

InAs

Indium Arsenide Crystal Wafero se mea e sili ona lelei mo le faia o masini Hall ma le masini mageta mo lona faʻaogaina maualuga o le hall ae vaapiapi malosi bandgap, o se mea lelei mo le fausiaina o infrared detectors ma le galu umi o le 1-3.8 µm faʻaaogaina i le maualuga-malosi talosaga i le vevela potu, fa'apea fo'i le vaeluagalemu ole galu infrared super lattice lasers, ogatotonu-infrared LEDs masini fau mo lona 2-14 μm galu umi.E le gata i lea, o le InAs o se mea sili ona lelei e lagolago atili ai le InGaAs, InAsSb, InAsPSb & InNASSb poʻo le AlGaSb super lattice fausaga ma isi.

Leai.	Aitema	Fa'amatalaga Tulaga
1	Tele	2"	3"	4"
2	Ole mita mm	50.5±0.5	76.2±0.5	100±0.5
3	Metotia Tuputupu	LEC	LEC	LEC
4	Conductivity	P-ituaiga/Zn-doped, N-ituaiga/S-doped, Un-doped
5	Fa'atonuga	(100)±0.5°, (111)±0.5°
6	Mafiafia μm	500±25	600±25	800±25
7	Fa'asinomaga Flat mm	16±2	22±2	32±2
8	Faailoaina Flat mm	8±1	11±1	18±1
9	Fe'avea'i cm2/Vs	60-300, ≥2000 poʻo pe a manaʻomia
10	Fa'amauina o le Aveave cm-3	(3-80)E17 poʻo ≤5E16
11	TTV μm maualuga	10	10	10
12	punou μm maualuga	10	10	10
13	Mata'utia μm	15	15	15
14	Ta'ele'ele Masitele cm-2 maualuga	1000	2000	5000
15	Fa'ai'uga	P/E, P/P	P/E, P/P	P/E, P/P
16	afifiina	Fa'amaufa'ailoga fa'amaufa'ailoga ta'itasi i totonu o le taga alumini.

Fua Faatatau Linear	InAs
Molecular Weight	189.74
Fauga tioata	Fa'afefiloi zinc
Fa'aaliga	Efuefu tioata malo
Lisi Lisi	(936-942)°C
Fa'apuna	N/A
Malosi ile 300K	5.67 g/cm³
Gap Malosiaga	0.354 eV
Fa'asagaga Fa'alotoifale	0.16 Ω-cm
Numera CAS	1303-11-3
Numera EC	215-115-3

Indium Arsenide InAsi Western Minmetals (SC) Faalapotopotoga e mafai ona tuʻuina atu e pei o le polycrystalline lump poʻo se tioata tasi e tipiina, togitogiina, faʻaiila, poʻo le epi-sauni masi i le tele o le 2 "3" ma le 4" (50mm, 75mm,100mm) le lautele, ma p-ituaiga, n-ituaiga po o le un-doped conductivity ma <111> po o le <100> faasinomaga.O faʻamatalaga faʻapitoa e mo le tali sili ona lelei i a tatou tagata faʻatau i le lalolagi atoa.