Gallium Phosphide GaP

Fa'amatalaga

Gallium Phosphide GaP, o se semiconductor taua o mea eletise tulaga ese e pei o isi mea III-V tuufaatasia mea, crystallizes i le thermodynamically mautu fausaga ZB kupita, o se moli-samasama tioata semitransparent mea ma se va le tuusao o 2.26 eV (300K), o le fa'apipi'iina mai le 6N 7N maualuga mama gallium ma phosphorus, ma tupu i se tioata tasi e Liquid Encapsulated Czochralski (LEC) metotia.Gallium Phosphide tioata ua doped sulfur po o tellurium e maua ai le n-ituaiga semiconductor, ma le zinc doped e avea p-ituaiga conductivity mo le faʻapipiʻiina atili i le wafer manaʻomia, o loʻo i ai faʻaoga i masini faʻapipiʻi, eletise ma isi masini optoelectronics.E mafai ona saunia epi-Sauni mo lau LPE, MOCVD ma le MBE wafer epitaxial.Tulaga maualuga tasi tioata Gallium phosphide GaP wafer p-ituaiga, n-ituaiga po o le undoped conductivity i Western Minmetals (SC) Faalapotopotoga e mafai ona ofoina atu i le tele o le 2″ma le 3”(50mm, 75mm diameter), orientation <100>,<111 > fa'atasi ai ma le fa'ai'uga o le fa'au'uga pei ona tipi, fa'aiila po'o le fa'atosina epi.

Talosaga

Faʻatasi ai ma le maualalo o le taimi nei ma le maualuga o le faʻaogaina o le malamalama, o le Gallium phosphide GaP wafer e talafeagai mo faʻaaliga faʻaalia e pei o le mumu, moli, ma le lanu meamata moli-emitting diodes (LED) ma le moli tua o lanu samasama ma lanumeamata LCD ma isi mea gaosi meataalo LED ma. maualalo i le feololo susulu, o le GaP o loʻo faʻaaogaina lautele e avea ma mea faʻavae mo masini infrared ma mataʻituina mea pueata gaosiga.

Su'esu'e nei

Fa'amatalaga

Fa'ailoga

Fa'amatalaga Fa'apitoa

Gallium Phosphide GaP

O le maualuga o le tioata tasi Gallium Phosphide GaP wafer poʻo le substrate p-ituaiga, n-ituaiga poʻo le faʻaogaina o le amio i Western Minmetals (SC) Corporation e mafai ona ofoina atu i le tele o le 2" ma le 3" (50mm, 75mm) i le lautele, faʻasologa <100> , <111> fa'atasi ai ma le fa'ai'uga o le fa'a-oti, lapped, togitogia, fa'aiila, epi-saunia fa'agaioiina i totonu o se atigipusa mama e tasi fa'amaufa'ailoga i totonu o le taga alumini fa'apipi'i po'o fa'apitoa fa'apitoa i le fofo atoatoa.

Leai.	Aitema	Fa'amatalaga Tulaga
1	GaP Tele	2"
2	Ole mita mm	50.8 ± 0.5
3	Metotia Tuputupu	LEC
4	Ituaiga Conductivity	P-ituaiga/Zn-doped, N-ituaiga/(S, Si,Te)-doped, Un-doped
5	Fa'atonuga	<1 1 1> ± 0.5°
6	Mafiafia μm	(300-400) ± 20
7	Resistivity Ω-cm	0.003-0.3
8	Fa'asinomaga Mafolafola (OF) mm	16±1
9	Fa'ailoaina mafolafola (IF) mm	8±1
10	Hall Fe'avea'i cm2/Vs min	100
11	Fa'amauina o le Aveave cm^-3	(2-20) E17
12	Dislocation Density cm^-2maualuga	2.00E+05
13	Fa'ai'uga	P/E, P/P
14	afifiina	Fa'amaufa'ailogaina pusa mama e tasi i le taga alumini fa'atasi, pusa pusa i fafo

Fua Faatatau Linear	GaP
Molecular Weight	100.7
Fauga tioata	Fa'afefiloi zinc
Fa'aaliga	moli moli
Lisi Lisi	N/A
Fa'apuna	N/A
Malosi ile 300K	4.14 g/cm³
Gap Malosiaga	2.26 eV
Tete'e i totonu	N/A
Numera CAS	12063-98-8
Numera EC	235-057-2

Gallium Phosphide GaP Wafer, faʻatasi ai ma le maualalo o le taimi nei ma le maualuga o le faʻaogaina o le malamalama, e fetaui lelei mo faʻaaliga faʻaaliga e pei o le mumu, moli, ma le lanu meamata moli-emitting diodes (LEDs) ma le moli tua o lanu samasama ma lanumeamata LCD ma isi mea ma meataalo LED gaosiga ma maualalo i le feololo. susulu, o le GaP o loʻo faʻaaogaina lautele e avea ma mea faʻavae mo masini infrared ma mataʻituina mea pueata gaosiga.