Gallium Nitride GaN

Fa'amatalaga

Gallium Nitride GaN, CAS 25617-97-4, mole mole 83.73, fausaga tioata wurtzite, o se binary tuufaatasia tuusaʻo fusi-gap semiconductor o le vaega III-V tuputupu aʻe e se auala faagasologa ammonothermal sili ona atiae.O loʻo faʻaalia i se tulaga lelei atoatoa tioata, maualuga le vevela o le eletise, maualuga le eletise eletise, maualuga eletise eletise ma le lautele lautele, Gallium Nitride GaN o loʻo i ai uiga manaʻomia i optoelectronics ma sensing applications.

Talosaga

Gallium Nitride GaN e talafeagai mo le gaosiga o le gaosiga o le televave o le saoasaoa ma le maualuga o le malosi o le moli-emitting diodes LED vaega, laser ma optoelectronics masini e pei o le lanu meamata ma le lanumoana, eletise eletise eletise (HEMTs) oloa ma i le malosi maualuga. ma alamanuia gaosiga o masini vevela maualuga.

Tilivaina

Gallium Nitride GaN i Western Minmetals (SC) Corporation e mafai ona tu'uina atu i le lapopo'a o le li'o fa'ato'aga 2 inisi "po'o le 4" (50mm, 100mm) ma sikuea fa'ailoga 10x10 po'o le 10x5 mm.Soʻo se lapoʻa faʻapitoa ma faʻamatalaga e mo le tali sili ona lelei i a tatou tagata faʻatau i le lalolagi atoa.

Su'esu'e nei

Fa'amatalaga

Fa'ailoga

Fa'amatalaga Fa'apitoa

Gallium Nitride GaN

Gallium Nitride GaNi Western Minmetals (SC) Faalapotopotoga e mafai ona tuʻuina atu i le lapopoa o le wafer lapotopoto 2 inisi "poʻo le 4" (50mm, 100mm) ma sikuea wafer 10 × 10 poʻo le 10 × 5 mm.Soʻo se lapoʻa faʻapitoa ma faʻamatalaga e mo le tali sili ona lelei i a tatou tagata faʻatau i le lalolagi atoa.

Leai.	Aitema	Fa'amatalaga Tulaga
1	foliga	Li'o	Li'o	Square
2	Tele	2"	4"	--
3	Ole mita mm	50.8±0.5	100±0.5	--
4	Itu Umi mm	--	--	10x10 po'o le 10x5
5	Metotia Tuputupu	HVPE	HVPE	HVPE
6	Fa'atonuga	C-vaalele (0001)	C-vaalele (0001)	C-vaalele (0001)
7	Ituaiga Conductivity	N-ituaiga/Si-doped, Un-doped, Semi-insulating
8	Resistivity Ω-cm	<0.1, <0.05, >1E6
9	Mafiafia μm	350±25	350±25	350±25
10	TTV μm maualuga	15	15	15
11	punou μm maualuga	20	20	20
12	EPD cm-2	<5E8	<5E8	<5E8
13	Fa'ai'uga	P/E, P/P	P/E, P/P	P/E, P/P
14	Fa'asaa o luga	Luma: ≤0.2nm, Tua: 0.5-1.5μm poʻo ≤0.2nm
15	afifiina	Fa'amaufa'ailoga fa'amaufa'ailoga ta'itasi i totonu o le taga alumini.

Fua Faatatau Linear	GaN
Molecular Weight	83.73
Fauga tioata	Zinc blende/Wurtzite
Fa'aaliga	Malosi fe'avea'i
Lisi Lisi	2500 °C
Fa'apuna	N/A
Malosi ile 300K	6.15 g/cm³
Gap Malosiaga	(3.2-3.29) eV ile 300K
Tete'e i totonu	>1E8 Ω-cm
Numera CAS	25617-97-4
Numera EC	247-129-0

Gallium Nitride GaNe talafeagai mo le gaosiga o le tipi-matamata maualuga saoasaoa ma le maualuga gafatia susulu malamalama-emitting diodes vaega LEDs, leisa ma optoelectronics masini e pei o le lanu meamata ma lanu moana lasers, eletise eletise mobility transistors (HEMTs) oloa ma i le malosi-maualuga ma maualuga- masini vevela fale gaosi oloa.