Gallium Arsenide GaAs

Fa'amatalaga

Gallium ArsenideGaAs o le a tuusaʻo fusi fusi semiconductor o vaega III-V synthesized e le itiiti ifo i le 6N 7N maualuga mama gallium ma arsenic elemene, ma tioata tupu e le VGF po o le LEC faagasologa mai le mama maualuga polycrystalline gallium arsenide, foliga lanu efuefu, tioata kupita ma fausaga zinc-blende.Faatasi ai ma le doping o le carbon, silicon, tellurium poʻo le zinc e maua ai le n-type poʻo le p-type ma semi-insulating conductivity, e mafai ona tipiina se tioata InAs cylindrical ma faʻapipiʻi i le avanoa ma le wafer i le tipi, etched, polesi poʻo le epi -sauni mo MBE poʻo le MOCVD epitaxial tuputupu aʻe.Gallium Arsenide wafer e masani ona faʻaaogaina e fau ai masini faʻaeletoroni e pei ole infrared light-emitting diodes, laser diodes, optical windows, field-effect transistors FETs, linear of digital ICs and solar cell.O vaega o le GaAs e aoga i alaleo maualuga-maualuga ma le faʻaogaina vave faʻaeletoroni faʻaoga, faʻaoga vaivai-faʻailoga.E le gata i lea, o le Gallium Arsenide substrate o se mea lelei mo le gaosiga o vaega RF, microwave frequency ma monolithic ICs, ma LEDs masini i fesoʻotaʻiga faʻapitoa ma faʻatonuga mo lona faʻaogaina o le fale, maualuga le malosi ma le faʻamautuina o le vevela.

Tilivaina

Gallium Arsenide GaAs i Western Minmetals (SC) Corporation e mafai ona tuʻuina atu e pei o le polycrystalline lump poʻo se tioata tioata tasi i le tipi, togiina, faʻaiila, poʻo le epi-sauni i le lapoa o le 2" 3" 4" ma le 6" (50mm, 75mm, 100mm, 150mm) le lautele, faʻatasi ai ma le p-ituaiga, n-ituaiga poʻo le semi-insulating conductivity, ma <111> poʻo <100> faʻatonuga.O faʻamatalaga faʻapitoa e mo le tali sili ona lelei i a tatou tagata faʻatau i le lalolagi atoa.