Gallium Antimonide GaSb

Fa'amatalaga

Gallium Antimonide GaSb, o se semiconductor o le vaega III-V faʻapipiʻi faʻatasi ma le zinc-blende lattice structure, o loʻo tuʻufaʻatasia e le 6N 7N maualuga mama gallium ma elemene antimony, ma tupu aʻe i tioata e ala i le LEC auala mai le directionally aisa polycrystalline ingot po VGF auala ma EPD<1000cm^-3.GaSb wafer e mafai ona tipi i totonu ma fau mulimuli ane mai se tasi tioata tioata ma se tulaga maualuga maualuga o laina eletise, fausaga lattice tulaga ese ma faifai pea, ma le maualalo o le faaletonu, faasinoupu sili ona maualuga nai lo le tele o isi mea e le u'amea.GaSb e mafai ona fa'agaioia ma se filifiliga lautele i le sa'o pe leai se fa'atonuga, maualalo po'o le maualuga le fa'aogaina o le doped, lelei le mae'a ma mo MBE po'o le MOCVD epitaxial tuputupu a'e.Gallium Antimonide substrate o loʻo faʻaaogaina i le pito sili ona mataʻutia o ata-optic ma optoelectronic talosaga e pei o le fausiaina o ata puʻeina, infrared detectors ma le umi o le ola, maualuga maaleale ma faʻamaoni, vaega photoresist, infrared LEDs ma lasers, transistors, vevela photovoltaic cell. ma faiga thermo-photovoltaic.

Tilivaina

Gallium Antimonide GaSb i Western Minmetals (SC) Faalapotopotoga e mafai ona ofoina atu i le n-ituaiga, p-ituaiga ma undoped semi-insulating conductivity i le tele o le 2 "3" ma le 4" (50mm, 75mm, 100mm) lautele, orientation <111> po'o le <100>, fa'atasi ai ma fa'ama'i fa'ama'i fa'auma o fa'ama'i 'oti, togitogi, fa'aiila po'o le maualuga o le fa'au'uga epitaxy.O fasi pepa uma o lo'o tusia ta'itasi le laser mo le fa'asinomaga.I le taimi nei, o le polycrystalline gallium antimonide GaSb lump o loʻo faʻapipiʻiina foi pe a talosagaina i le fofo atoatoa.

Su'esu'e nei

Fa'amatalaga

Fa'ailoga

Fa'amatalaga Fa'apitoa

Gallium Antimonide

GaSb

Gallium Antimonide GaSbsubstrate o loʻo faʻaaogaina i le pito sili ona mataʻutia photo-optic ma optoelectronic talosaga e pei o le fausiaina o ata puʻeina, infrared detectors ma le umi o le ola, maaleale maualuga ma le faʻamaoni, photoresist vaega, infrared LEDs ma lasers, transistors, vevela photovoltaic cell ma thermo. -photovoltaic faiga.

	Aitema	Fa'amatalaga Tulaga
1	Tele	2"	3"	4"
2	Ole mita mm	50.5±0.5	76.2±0.5	100±0.5
3	Metotia Tuputupu	LEC	LEC	LEC
4	Conductivity	P-ituaiga/Zn-doped, Un-doped, N-ituaiga/Te-doped
5	Fa'atonuga	(100)±0.5°, (111)±0.5°
6	Mafiafia μm	500±25	600±25	800±25
7	Fa'asinomaga Flat mm	16±2	22±1	32.5±1
8	Faailoaina Flat mm	8±1	11±1	18±1
9	Fe'avea'i cm2/Vs	200-3500 poʻo pe a manaʻomia
10	Fa'amauina o le Aveave cm-3	(1-100)E17 poʻo pe a manaʻomia
11	TTV μm maualuga	15	15	15
12	punou μm maualuga	15	15	15
13	Mata'utia μm	20	20	20
14	Ta'ele'ele Masitele cm-2 maualuga	500	1000	2000
15	Fa'ai'uga	P/E, P/P	P/E, P/P	P/E, P/P
16	afifiina	Koneteina wafer ta'itasi ua fa'amaufa'ailogaina ile ato Alumini.

Fua Faatatau Linear	GaSb
Molecular Weight	191.48
Fauga tioata	Fa'afefiloi zinc
Fa'aaliga	Efuefu tioata malo
Lisi Lisi	710°C
Fa'apuna	N/A
Malosi ile 300K	5.61 g/cm³
Gap Malosiaga	0.726 eV
Tete'e i totonu	1E3 Ω-cm
Numera CAS	12064-03-8
Numera EC	235-058-8

Gallium Antimonide GaSbi Western Minmetals (SC) Faalapotopotoga e mafai ona ofoina atu i le n-ituaiga, p-ituaiga ma undoped semi-insulating conductivity i le tele o le 2 "3" ma le 4" (50mm, 75mm, 100mm) lautele, orientation <111> po <100 >, fa'atasi ai ma fa'ama'i fa'ama'i fa'ama'i fa'amae'a e pei ona tipi, togitogi, fa'aiila po'o le maualuga o le fa'au'uga epitaxy.O fasi pepa uma o lo'o tusia ta'itasi le laser mo le fa'asinomaga.I le taimi nei, o le polycrystalline gallium antimonide GaSb lump o loʻo faʻapipiʻiina foi pe a talosagaina i le fofo atoatoa.