FZ NTD Silicon Wafer

Fa'amatalaga

FZ-NTD Silicon Wafer, ua ta'ua o Float-Zone Neutron Transmutation Doped Silicon Wafer.E leai se okesene, maualuga le mama ma maualuga le resistivity silicon e mafai ona maua ey Sone-Float-FZ ( Sone-Floating) tupua tioata, High resistivity FZ tioata silicon e masani ona doped e Neutron Transmutation Doping (NTD) faagasologa, lea irradiation neutron i undoped kalia sone opeopea e faia isotopes silika maileia i neutrons ona pala i le dopants manaomia e ausia le sini doping.E ala i le fetuunaiga o le maualuga o le neutron radiation, e mafai ona suia le resistivity e aunoa ma le faʻaofiina o dopants fafo ma faʻamautinoa ai le mama atoatoa.FZ NTD silicon wafers (Float Zone Neutron Transmutation Doping Silicon) o loʻo i ai mea faʻapitoa faʻapitoa o le faʻaogaina o le faʻaogaina o le doping ma le tufatufaina atu o le resistivity radial, pito maualalo le mama,ma le maualuga o le avefe'au laiti i le olaga atoa.

Tilivaina

I le avea ai o se maketi faʻatau oloa o le NTD silicon mo le faʻalauiloaina o le eletise, ma le mulimulitaia o le faʻatupulaia o manaʻoga mo le maualuga o le tulaga lelei, o le FZ NTD silicon wafer.i Western Minmetals (SC) Corporation e mafai ona ofoina atu ia tatou tagata faʻatau i le lalolagi atoa i lapopoa eseese e amata mai i le 2 ", 3", 4 ", 5" ma le 6 "diamita (50mm, 75mm, 100mm, 125mm ma le 150mm) ma le lautele o le resistivity 5 i le 2000 ohm.cm i <1-1-1>, <1-1-0>, <1-0-0> fa'ata'ita'iga fa'atasi ma fa'ama'oti fa'a'oti, lape, togitogi ma fa'aiila i luga ole afifi o pusa pua'a po'o kaseti. , poʻo faʻapitoa faʻapitoa i le fofo atoatoa.

Su'esu'e nei

Fa'amatalaga

Fa'ailoga

Fa'amatalaga Fa'apitoa

FZ NTD Silicon Wafer

I le avea ai o se maketi faʻatau oloa o le FZ NTD silicon mo le faʻalauiloaina o le mana, ma le mulimulitaʻia o le faʻatupulaia o manaʻoga mo le maualuga o le maualuga, o le FZ NTD silicon wafer i Western Minmetals (SC) Corporation e mafai ona ofoina atu i a tatou tagata faʻatau i le lalolagi atoa i lapopoa eseese mai le 2 ″ i le 6″ i le lautele (50, 75, 100, 125 ma 150mm) ma le lautele o le resistivity 5 i le 2000 ohm-cm i <1-1-1>, <1-1-0>, <1-0- 0> orientations ma lapped, etched ma polesi mae'a i luga o le afifi o foam pusa po o kaseti, pusa pusa i fafo po o le fa'apitoa fa'apitoa i le fofo atoatoa.

Leai.	Aitema	Fa'amatalaga Tulaga
1	Tele	2"	3"	4"	5"	6"
2	Diamita	50.8±0.3	76.2±0.3	100±0.5	125±0.5	150±0.5
3	Conductivity	n-ituaiga	n-ituaiga	n-ituaiga	n-ituaiga	n-ituaiga
4	Fa'atonuga	<100>, <111>, <110>
5	Mafiafia μm	279, 381, 425, 525, 575, 625, 675, 725 poʻo pe a manaʻomia.
6	Resistivity Ω-cm	36-44, 44-52, 90-110, 100-250, 200-400 poʻo pe a manaʻomia
7	RRV maualuga	8%, 10%, 12%
8	TTV μm maualuga	10	10	10	10	10
9	Aufana/A'au μm maualuga	30	30	30	30	30
10	Ta'ita'i Ola μs	>200, >300, >400 po'o le mana'omia
11	Fa'ai'uga	As-cut, Lapped, Faila
12	afifiina	Pusa foam i totonu, pusa pusa i fafo.

Parameter Mea Fa'avae

Faailoga	Si
Numera Atomic	14
Atomic Weight	28.09
Vaega o Elemene	Metalloid
Vaega, Vaitaimi, Poloka	14, 3, P
Fauga tioata	Taimane
Lanu	Efuefu pogisa
Lisi Lisi	1414°C, 1687.15 K
Fa'apuna	3265°C, 3538.15 K
Malosi ile 300K	2.329 g/cm³
Tete'e i totonu	3.2E5 Ω-cm
Numera CAS	7440-21-3
Numera EC	231-130-8

FZ-NTD Silicon Wafere taua tele mo faʻaoga i le mana maualuga, tekonolosi faʻamatalaga ma i masini semiconductor e tatau ona galue i tulaga ogaoga poʻo le mea e manaʻomia ai suiga maualalo o le resistivity i luga o le wafer, e pei o le gate-turn-off thyristor GTO, static induction thyristor SITH, giant transistor GTR, insulate-gate bipolar transistor IGBT, faaopoopo HV diode PIN.FZ NTD n-ituaiga silicon wafer o loʻo avea foʻi ma mea faʻaoga autu mo suiga eseese, faʻasaʻo, elemene mana tetele, masini eletise fou, masini photoelectronic, silicon rectifier SR, silicon control SCR, ma vaega faʻapitoa e pei o tioata ma faamalama. mo talosaga terahertz.