Epitaxial (EPI) Silicon Wafer

Fa'amatalaga

Epitaxial Silicon Waferpo'o le EPI Silicon Wafer, o se mea fa'asala ole vaega tioata semiconducting o lo'o teuina i luga o le tioata fa'aiila o se mea fa'apipi'i silika e ala i le tuputupu a'e o le epitaxial.O le epitaxial layer atonu o le mea lava e tasi e pei o le substrate e tutusa le tuputupu ae o le epitaxial, poʻo se mea faʻapitoa faʻatasi ma le tulaga manaʻomia faapitoa e ala i le tuputupu aʻe o le epitaxial heterogeneous, lea e faʻaaogaina ai tekinolosi tuputupu aʻe epitaxial e aofia ai le vailaʻau vailaʻau CVD, vaega vai epitaxy LPE, faʻapea foʻi ma le mole mole. epitaxy MBE e ausia ai le tulaga sili ona maualuga o le maualalo o le faʻaletonu ma le lelei o luga.Silicon Epitaxial Wafers e masani ona faʻaaogaina i le gaosiga o masini semiconductor maualuga, elemene semiconductor sili ona tuʻufaʻatasia ICs, tuʻufaʻatasi ma masini eletise, faʻaaogaina foi mo elemene o le diode ma transistor poʻo le substrate mo IC e pei o le bipolar type, MOS ma le BiCMOS masini.E le gata i lea, e tele vaega epitaxial ma ata mafiafia EPI silicon wafers e masani ona faʻaaogaina i microelectronics, photonics ma photovoltaics application.

Tilivaina

Epitaxial Silicon Wafers poʻo le EPI Silicon Wafer i Western Minmetals (SC) Corporation e mafai ona ofoina atu i le lapopoa o le 4, 5 ma le 6 inisi (100mm, 125mm, 150mm le lautele), faʻatasi ai ma le faʻatulagaina <100>, <111>, epilayer resistivity o <1ohm -cm pe oʻo atu i le 150ohm-cm, ma epilayer mafiafia o<1um poʻo luga i le 150um, e faʻamalieina ai manaʻoga eseese i luga o le maeʻa o le faʻamaʻiina poʻo le LTO togafitiga, faʻapipiʻi i le kaseti ma pusa pusa i fafo, poʻo le faʻatulagaina faʻapitoa i le fofo atoatoa. .

Su'esu'e nei

Fa'amatalaga

Fa'ailoga

Fa'amatalaga Fa'apitoa

Epi Silicon Wafer

Epitaxial Silicon Waferspoʻo le EPI Silicon Wafer i Western Minmetals (SC) Corporation e mafai ona ofoina atu i le lapopoa o le 4, 5 ma le 6 inisi (100mm, 125mm, 150mm diameter), faʻatasi ai ma le faʻatulagaina <100>, <111>, epilayer resistivity o <1ohm-cm poʻo e oʻo atu i le 150ohm-cm, ma le epilayer mafiafia o<1um poʻo luga i le 150um, e faʻamalieina ai manaʻoga eseese i luga o le maeʻa o le faʻamaʻiina poʻo le LTO togafitiga, faʻapipiʻi i le kaseti ma pusa pusa i fafo, pe pei o faʻamatalaga faʻapitoa i le fofo atoatoa.

Faailoga	Si
Numera Atomic	14
Atomic Weight	28.09
Vaega o Elemene	Metalloid
Vaega, Vaitaimi, Poloka	14, 3, P
Fauga tioata	Taimane
Lanu	Efuefu pogisa
Lisi Lisi	1414°C, 1687.15 K
Fa'apuna	3265°C, 3538.15 K
Malosi ile 300K	2.329 g/cm³
Tete'e i totonu	3.2E5 Ω-cm
Numera CAS	7440-21-3
Numera EC	231-130-8

Leai.	Aitema	Fa'amatalaga Tulaga
1	Uiga Lautele
1-1	Tele	4"	5"	6"
1-2	Ole mita mm	100±0.5	125±0.5	150±0.5
1-3	Fa'atonuga	<100>, <111>	<100>, <111>	<100>, <111>
2	Uiga Epitaxial Layer
2-1	Metotia Tuputupu	CVD	CVD	CVD
2-2	Ituaiga Conductivity	P po'o le P+, N/ po'o le N+	P po'o le P+, N/ po'o le N+	P po'o le P+, N/ po'o le N+
2-3	Mafiafia μm	2.5-120	2.5-120	2.5-120
2-4	Mafiafia tutusa	≤3%	≤3%	≤3%
2-5	Resistivity Ω-cm	0.1-50	0.1-50	0.1-50
2-6	Resistivity Uniformity	≤3%	≤5%	-
2-7	Ta'ese cm-2	<10	<10	<10
2-8	Tulaga lelei	E leai se pu, puao po'o pa'u moli o totoe, ma isi.
3	U'u Uiga o mea eleelea
3-1	Metotia Tuputupu	CZ	CZ	CZ
3-2	Ituaiga Conductivity	P/N	P/N	P/N
3-3	Mafiafia μm	525-675	525-675	525-675
3-4	Mafiafia Tulaga tutusa max	3%	3%	3%
3-5	Resistivity Ω-cm	E pei ona manaomia	E pei ona manaomia	E pei ona manaomia
3-6	Resistivity Uniformity	5%	5%	5%
3-7	TTV μm maualuga	10	10	10
3-8	punou μm maualuga	30	30	30
3-9	Mata'utia μm	30	30	30
3-10	EPD cm-2 maualuga	100	100	100
3-11	Fa'amatalaga pito	lapotopoto	lapotopoto	lapotopoto
3-12	Tulaga lelei	E leai se pu, puao po'o pa'u moli o totoe, ma isi.
3-13	Fa'ai'u Itu I tua	Tusia po'o LTO (5000±500Å)
4	afifiina	Kaseti i totonu, pusa pusa i fafo.

Silicon Epitaxial Waferso lo'o fa'aaogaina muamua i le gaosiga o masini semiconductor sili atu, elemene semiconductor sili ona tu'ufa'atasia ICs, tu'ufa'atasi ma masini eletise, fa'aoga fo'i mo elemene o le diode ma transistor po'o le substrate mo IC e pei o le bipolar type, MOS ma le BiCMOS masini.E le gata i lea, e tele vaega epitaxial ma ata mafiafia EPI silicon wafers e masani ona faʻaaogaina i microelectronics, photonics ma photovoltaics application.