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O lo'o fa'aalia e le Imec mea fa'aogaina III-V ma III-N i luga ole Silicon

Imec, le Belgian research and innovation hub, ua tuʻuina atu le GaAs-based heterojunction bipolar transistor (HBT) masini i luga o le 300mm Si, ma le CMOS-compatible GaN-based device i luga o le 200mm Si mo talosaga mm-wave.

O faʻaiʻuga e faʻaalia ai le gafatia o le III-V-on-Si ma le GaN-on-Si e pei o CMOS-fesoʻotaʻiga tekonolosi mo le faʻaogaina o RF pito i luma modules mo tua atu o 5G talosaga.Na tuʻuina atu i latou i le IEDM conference i le tausaga talu ai (Tes 2019, San Francisco) ma o le a faʻaalia i se faʻamatalaga autu a le Imec's Michael Peeters e uiga i fesoʻotaʻiga faʻatau i tua atu o fesoʻotaʻiga lautele i IEEE CCNC (10-13 Jan 2020, Las Vegas).

I fesoʻotaʻiga uaealesi, faʻatasi ai ma le 5G o le isi augatupulaga, o loʻo i ai le tuleia i luga o alalaupapa faʻaogaina maualuga, o loʻo alu ese mai i lalo ifo-6GHz faʻamau i faʻamau mm-galu (ma tua atu).O le faʻaofiina o nei mm-wave bands e iai sona aʻafiaga tele i le aotelega o fesoʻotaʻiga 5G ma masini feaveaʻi.Mo 'au'aunaga fe'avea'i ma Feso'ota'iga Uaealesi Fa'amaumau (FWA), e fa'aliliuina i fa'alavelave fa'apitoa pito i luma e tu'uina atu le fa'ailo i ma mai le antenna.

Ina ia mafai ona faʻagaioia i alalaupapa mm-galu, o le RF pito i luma pito i tua e tatau ona tuʻufaʻatasia le saoasaoa maualuga (faʻatagaina faʻamatalaga-fua o le 10Gbps ma tua atu) ma le mana maualuga.E le gata i lea, o la latou faʻatinoga i telefoni feaveaʻi e tuʻuina atu ai le maualuga o manaʻoga i luga o latou foliga ma le malosi o le malosi.I tua atu o le 5G, o nei manaʻoga e le toe mafai ona ausia i le pito i luma o le RF pito i luma o aso nei e masani ona faʻalagolago i le tele o tekinolosi eseese ma isi HBT faʻavae GaAs mo faʻamalosi eletise - ola i luga o mea laiti ma taugata GaAs substrates.

"Ina ia mafai ai le isi augatupulaga RF pito i luma modules i tua atu o le 5G, Imec suʻesuʻe CMOS-compatible III-V-on-Si tekonolosi", o le tala lea a Nadine Collaert, faʻatonu polokalame i Imec."O loʻo vaʻavaʻai le Imec i le tuʻufaʻatasia o vaega pito i luma (e pei o le eletise ma sui) ma isi faʻalapotopotoga faʻavae CMOS (e pei o le faʻatautaia o le eletise poʻo le transceiver technology), e faʻaitiitia ai le tau ma foliga faʻavae, ma mafai ai ona faʻaogaina faʻasologa fou. e fa'atatau i le fa'atinoga ma le lelei.O loʻo suʻesuʻeina e Imec ni auala eseese se lua: (1) InP i luga o Si, faʻatatau i le mm-galu ma ala i luga aʻe o le 100GHz (poloaiga 6G i le lumanaʻi) ma le (2) GaN-faʻavae masini i luga o Si, faʻatatau (i le vaega muamua) le mm-galu maualalo. fusi ma faʻafeiloaʻi talosaga e manaʻomia le maualuga o le malosi.Mo auala uma e lua, ua matou mauaina muamua masini faʻaogaina ma faʻamoemoega faʻatinoga, ma matou faʻaalia auala e faʻaleleia atili ai a latou faʻagaioiga masani.

GaAs/InGaP HBT masini fa'aola ile 300mm Si ua fa'aalia ose laasaga muamua ile fa'aogaina ole InP-fa'avae masini.O se fa'aputuga o masini e leai se fa'aletonu i lalo ifo o le 3x106cm-2 fa'a'ese'ese fa'a'ese'esega na maua mai i le fa'aogaina o le faiga fa'ainisinia fa'ainisinia (NRE) fa'apitoa a le Imec III-V.O masini e sili atu le lelei nai lo masini faʻasino, ma GaAs faʻapipiʻiina i luga ole Si substrates ma faʻamaʻi faʻamama faʻamama (SRB) layers.I le isi laasaga, o le a su'esu'eina masini fa'avae InP (HBT ma le HEMT).

O le ata o loʻo i luga o loʻo faʻaalia ai le NRE auala mo le tuʻufaʻatasia o le III-V / CMOS hybrid i luga o le 300mm Si: (a) nano-trench formation;o faaletonu ua maileia i le itu vaiti vaiti;(b) HBT fa'aputuga fa'atupuina e fa'aaoga ai le NRE ma (c) 'ese'ese filifiliga fa'atulagaina mo le tu'ufa'atasia o masini HBT.

E le gata i lea, o le CMOS-compatible GaN/AlGaN-faʻavae masini i luga o le 200mm Si ua faʻatulagaina faʻatusatusaga faʻataʻitaʻiga masini eseese e tolu - HEMTs, MOSFETs ma MISHEMTs.Na fa'aalia o masini MISHEMT e sili atu nai lo isi ituaiga masini e tusa ai ma le fa'aogaina o masini ma le fa'aogaina o le pisa mo le fa'agaoioia maualuga.Ole pito maualuga ole laina ole fT/fmax ile 50/40 na maua mo le umi ole faitotoa 300nm, lea e ogatusa ma masini GaN-on-SiC ua lipotia.E ese mai i le fa'ateleina ole umi ole faitoto'a, o fa'ai'uga muamua ile AlInN e fai ma pa puipui e fa'aalia ai le malosi e fa'aleleia atili ai le fa'atinoga, ma o lea, fa'ateleina ai le fa'agaoioi o le masini i fusi mm-galu mana'omia.


Taimi meli: 23-03-21
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